Method of manufacturing laminate

ABSTRACT

A method of manufacturing a laminate, the method including: providing a film-form firing material on a support sheet, the film-form firing material containing a sinterable metal particle and a binder component and having an identical or substantially identical shape and an identical size to a shape and size of a semiconductor chip; applying a back surface side of the semiconductor chip to the film-form firing material on the support sheet to face each other; peeling off the film-form firing material and the semiconductor chip from the support sheet; applying, to a substrate, a film-form firing material side of the semiconductor chip to which the film-form firing material has been applied; and heating the film-form firing material to 200° C. or higher to sinter-bond the semiconductor chip and the substrate.

TECHNICAL FIELD

The present invention relates to a method of manufacturing a laminate.

The present application claims priority to JP 2019-153523 filed in Japanon Aug. 26, 2019, the contents of which are incorporated herein.

BACKGROUND ART

In recent years, in association with an increase in the voltage andcurrent levels in automobiles, air conditioners, personal computers, andthe like, the demand for power semiconductor elements (power devices)installed in these has been increasing. Power semiconductor elements arecharacteristically used under high voltage and high current conditions,and this is likely to cause a problem of generating heat from thesemiconductor element.

To dissipate the heat generated from the semiconductor element, a heatsink has been sometimes attached around the semiconductor element in theart. However, insufficient thermal conductivity at a joint portionbetween the heat sink and the semiconductor element may hinder efficientheat dissipation.

Examples of a joint material that can form the joint portion withexcellent thermal conductivity known in the art include a paste-likemetal particulate composition which can be prepared by mixing a heatsinterable metal particle, a polymer dispersant, and a volatiledispersion medium. This composition is a firing material to be sinteredto form a solid metal, and this solid metal is believed to be able toconstitute the joint portion.

When such a paste-like firing material is used, the paste-like firingmaterial is applied to an object to be sinter-jointed and sintered toform the joint portion. However, it is difficult to apply the materialin uniform thickness, and it is difficult to form the joint portion withhigh thickness stability.

Such a problem can be solved by using a film-form firing material. Thejoint portion with high stability can be formed by applying a film-formfiring material with high thickness stability, which is formed inadvance, to an object to be sinter-jointed (e.g., a semiconductor wafer)and sintering.

For such a film-form firing material, for example, those containing asinterable metal particle and a binder component are disclosed. Thisfilm-form firing material is used as a support sheet-attached film-formfiring material including a support sheet releasably attachedtemporarily to one side of the film-form firing material and a releasefilm provided on the other side. In addition, the support sheet isprovided with a pressure sensitive adhesive layer on an entire surfaceor an outer peripheral portion of a substrate film, and the averagethickness of the end portion of the film-form firing material, the areaof the release film, and the presence or absence of a slit in therelease film are configured to satisfy specific conditions (see PatentDocument 1). This film-form firing material is used after peeling offthe release film and can form the joint portion with excellent thicknessstability and thermal conductivity. Furthermore, in this film-formfiring material, damage, such as cohesive failure, which is usually aptto occur when the release film is peeled off, is prevented.

CITATION LIST Patent Literature

Patent Document 1: JP 6327630 B

SUMMARY OF INVENTION Technical Problem

However, the film-form firing material described in Patent Document 1 isassumed to be applied to an entire back surface of a semiconductor waferwhen the film is used. Thus, when the semiconductor wafer is dividedinto semiconductor chips, this film-form firing material after appliedto the semiconductor wafer is to be cut to match the shape and size ofthe semiconductor chips. The film-form firing material after cutting isfinally sintered to form a joint portion for jointing the semiconductorchip and the substrate. However, the film-form firing materialcontaining a large amount of a sinterable metal particle is relativelybrittle and thus has caused a problem of easily generating cuttingdebris when the material is cut and easily broken depending on thecutting method. Furthermore, the semiconductor chip with a defect cannotbe used, and thus this has caused a problem of wasting the portion ofthe film-form firing material applied to this semiconductor chip andreducing the yield of the film-form firing material.

An object of the present invention is to provide a method ofmanufacturing a laminate, the laminate configured by laminating asemiconductor chip and a substrate via a joint portion, in which thejoint portion is formed by sintering a film-form firing material, hasexcellent thickness stability and thermal conductivity, can preventdamage to the film-form firing material, and provides a good yield ofthe film-form firing material.

Solution to Problem

The present invention provides a method of manufacturing a laminate, themethod including:

providing a film-form firing material on a support sheet, the film-formfiring material containing a sinterable metal particle and a bindercomponent and having an identical or substantially identical shape andan identical size to a shape and size of a semiconductor chip to beapplied;

applying a back surface side of the semiconductor chip to the film-formfiring material on the support sheet to face each other;

peeling off the film-form firing material and the semiconductor chipfrom the support sheet;

applying, to a substrate, a film-form firing material side of thesemiconductor chip to which the film-form firing material has beenapplied; and

heating the film-form firing material to 200° C. or higher tosinter-bond the semiconductor chip and the substrate.

In the method of manufacturing a laminate of the present invention, themethod may include sinter-bonding the semiconductor chip and thesubstrate by applying pressure of 5 MPa or greater to the film-formfiring material in addition to heating the film-form firing material to200° C. or higher.

In the method of manufacturing a laminate of the present invention, thesubstrate may be a ceramic substrate.

In the method of manufacturing a laminate of the present invention, thesupport sheet is provided with a substrate film and a pressure sensitiveadhesive layer provided on an entire surface on the substrate film, andthe film-form firing material may be provided on the pressure sensitiveadhesive layer of the support sheet.

In the method of manufacturing a laminate of the present invention, thesupport sheet is provided with a substrate film and a pressure sensitiveadhesive layer provided in a peripheral edge portion on the substratefilm, and the film-form firing material may be provided in a regionwhere the pressure sensitive adhesive layer is not provided on thesubstrate film of the support sheet.

In the method of manufacturing a laminate of the present invention, thepressure sensitive adhesive layer may have energy ray curability.

In the method of manufacturing a laminate of the present invention, thepressure sensitive adhesive layer having energy ray curability may beirradiated with an energy ray and the film-form firing material and thesemiconductor chip are peeled off from the support sheet.

In the method of manufacturing a laminate of the present invention, thefilm-form firing material formed on a release film may be transferredonto the support sheet to provide the film-form firing material on thesupport sheet.

In the method of manufacturing a laminate of the present invention, thefilm-form firing material may be formed on the release film by printing.

In the method of manufacturing a laminate of the present invention, thefilm-form firing material may be formed on the release film by punchingusing a mold having an identical or substantially identical shape and anidentical size to a shape and size of the semiconductor chip to beapplied.

In the method of manufacturing a laminate of the present invention, thefilm-form firing material may be provided on the support sheet byprinting.

In the method of manufacturing a laminate of the present invention, thesupport sheet may be circular.

In the method of manufacturing a laminate of the present invention, thesupport sheet may be expanded to generate stress at an interface betweenthe support sheet and the film-form firing material, and the film-formfiring material and the semiconductor chip are peeled off from thesupport sheet.

In the method of manufacturing a laminate of the present invention, thefilm-form firing materials may be provided side-by-side in a latticepattern on the support sheet.

Advantageous Effects of Invention

The present invention provides a method of manufacturing a laminate, thelaminate configured by laminating a semiconductor chip and a substratevia a joint portion, in which the joint portion is formed by sintering afilm-form firing material, has excellent thickness stability and thermalconductivity, can prevent damage to the film-form firing material, andprovides a good yield of the film-form firing material.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a plan view schematically illustrating an example of asupport sheet used in a method of manufacturing of the presentembodiment.

FIG. 1B is a cross-sectional view of the support sheet illustrated inFIG. 1A taken along line I-I in FIG. 1A.

FIG. 2A is a plan view schematically illustrating another example of asupport sheet used in a method of manufacturing of the presentembodiment.

FIG. 2B is a cross-sectional view of the support sheet illustrated inFIG. 2A taken along line II-II in FIG. 2A.

FIG. 3A is a cross-sectional view for schematically illustrating anexample of a method of manufacturing a laminate of a first embodiment.

FIG. 3B is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the firstembodiment.

FIG. 3C is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the firstembodiment.

FIG. 3D is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the firstembodiment.

FIG. 3E is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the firstembodiment.

FIG. 4 is a plan view schematically illustrating an example of a supportsheet-attached film-form firing material produced by a method ofmanufacturing of the first embodiment.

FIG. 5 is a plan view schematically illustrating another example of asupport sheet-attached film-form firing material produced by a method ofmanufacturing of the first embodiment.

FIG. 6 is a plan view schematically illustrating yet another example ofa support sheet-attached film-form firing material produced by a methodof manufacturing of the first embodiment.

FIG. 7 is a cross-sectional view schematically illustrating an exampleof a support sheet-attached film-form firing material provided with aprotective film produced by a method of manufacturing of the firstembodiment.

FIG. 8 is a cross-sectional view schematically illustrating anotherexample of a support sheet-attached film-form firing material providedwith a protective film produced by a method of manufacturing of thefirst embodiment.

FIG. 9A is a cross-sectional view for schematically illustrating anexample of a method of manufacturing a laminate of a second embodiment.

FIG. 9B is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the secondembodiment.

FIG. 9C is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the secondembodiment.

FIG. 9D is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the secondembodiment.

FIG. 9E is a cross-sectional view for schematically illustrating anexample of the method of manufacturing a laminate of the secondembodiment.

FIG. 10 is a plan view schematically illustrating an example of asupport sheet-attached film-form firing material produced by a method ofmanufacturing of the second embodiment.

DESCRIPTION OF EMBODIMENTS Method of Manufacturing Laminate

A method of manufacturing a laminate according to an embodiment of thepresent invention includes:

providing a film-form firing material on a support sheet, the film-formfiring material containing a sinterable metal particle and a bindercomponent and having an identical or substantially identical shape andan identical size to a shape and size of a semiconductor chip to beapplied (which may be referred to as “step A” in the presentspecification);

applying a back surface side of the semiconductor chip to the film-formfiring material on the support sheet to face each other (which may bereferred to as “step B” in the present specification);

peeling off the film-form firing material and the semiconductor chipfrom the support sheet (which may be referred to as “step C” in thepresent specification);

applying, to a substrate, a film-form firing material side of thesemiconductor chip to which the film-form firing material has beenapplied (which may be referred to as “step D” in the presentspecification); and

heating the film-form firing material to 200° C. or higher tosinter-bond the semiconductor chip and the substrate (which may bereferred to as “step E” in the present specification).

In the method of manufacturing a laminate of the present embodiment, instep A, the film-form firing material is provided on the support sheet,the film-form firing material having an identical or substantiallyidentical shape and an identical size to a shape and size of asemiconductor chip to be applied, and thus this eliminates the need tocut the film-form firing material to match the shape and size of thesemiconductor chip. Thus, this eliminates the generation of cuttingdebris originating from the film-form firing material even if thefilm-form firing material is brittle and prevents damage to thefilm-form firing material. In addition, in step B, a semiconductor chipis applied to the film-form firing material, thus this prevents the useof a semiconductor chip with a defect and ensures that a semiconductorchip free from defect can be applied to the film-form firing material.Thus, this eliminates the waste of the film-form firing material andprovides a good yield of the film-form firing material.

Hereinafter, first, the support sheet, the film-form firing material,the semiconductor chip, and the substrate used in the present embodimentwill be described.

Support Sheet

Provided that, as for the support sheet, the film-form firing materialcan be provided on the support sheet and steps B to C described latercan be performed, and the support sheet is not particularly limited.

The shape of the support sheet is not particularly limited, but examplesinclude a quadrilateral and a circle. The quadrilateral includes, forexample, a square and a rectangle, and the rectangle includes aband-like shape (in other words, an elongated rectangle).

In the present specification, unless otherwise noted, “the shape of thesupport sheet” means a shape of the support sheet in a planar view(i.e., a planar shape) when the support sheet is looked down from abovethe main surface (e.g., a first surface described later).

Examples of the support sheet include those provided with a substratefilm and a pressure sensitive adhesive layer provided on an entiresurface of the substrate film.

FIG. 1A is a plan view schematically illustrating an example of such asupport sheet, and FIG. 1B is a cross-sectional view of the supportsheet illustrated in FIG. 1A taken along line I-I in FIG. 1A.

A support sheet 11 illustrated here has a quadrangular shape and isconfigured to include a substrate film 111 and a pressure sensitiveadhesive layer 112 provided on an entire surface of one surface (whichmay be referred to as the “first surface” in the present specification)111 a of the substrate film 111.

The pressure sensitive adhesive layer 112 suitably facilitates peelingof the film-form firing material from the support sheet 11 in step Cdescribed later, for example.

When the support sheet 11 is used, a surface (which may be referred toas the “first surface” in the present specification) 112 a of thepressure sensitive adhesive layer 112, the surface opposite from thesubstrate film 111 side of the pressure sensitive adhesive layer 112, isto be a surface facing the film-form firing material in step A describedlater. One surface (which may be referred to as the “first surface” inthe present specification) 11 a of the support sheet 11 is the same asthe first surface 112 a of the pressure sensitive adhesive layer 112.

Examples of the support sheet also include those provided with asubstrate film and a pressure sensitive adhesive layer provided in aperipheral edge portion on the substrate film.

FIG. 2A is a plan view schematically illustrating an example of such asupport sheet, and FIG. 2B is a cross-sectional view of the supportsheet illustrated in FIG. 2A taken along line II-II in FIG. 2A.

In FIG. 2A and figures to follow, the same components as thoseillustrated in the figures already explained are denoted by the samereference numerals as in the figures already explained, and theirdetailed explanations will be omitted.

A support sheet 19 illustrated here is configured to include a substratefilm 111 and a pressure sensitive adhesive layer 192 provided in aperipheral edge portion 1110 a of one surface (first surface) 111 a ofthe substrate film 111.

The peripheral edge portion 1110 a of the first surface 111 a of thesubstrate film 111 is a narrow region of the first surface 111 a, thenarrow region being along the outer peripheral portion of the substratefilm 111, and the pressure sensitive adhesive layer 192 has a band-likeshape along the outer peripheral portion. In addition, the pressuresensitive adhesive layer 192 is provided continuously in a square ringshape in the peripheral edge portion 1110 a.

A first surface 19 a of the support sheet 19 is the same as the firstsurface 111 a of the substrate film 111.

The pressure sensitive adhesive layer 192 is, for example, suitably usedto bond the support sheet 19 to a support frame to temporality fix thesupport sheet 19 in steps B to C described later and to release thesupport sheet 19 from the support frame in a subsequent step.

The support sheet is preferably provided with a pressure sensitiveadhesive layer on an entire surface or in a peripheral edge portion onthe substrate film; in other words, the support sheet is preferablyprovided with a pressure sensitive adhesive layer provided at least in aperipheral edge portion on the substrate film.

Substrate Film

Examples of a constituent material of the substrate film include aresin.

Examples of the resin include polyethylenes, such as low-densitypolyethylenes (LDPEs) and linear low density polyethylenes (LLDPEs);polyolefins other than polyethylenes, such as polypropylenes,polybutenes, polybutadienes, and polymethylpentenes; ethylene-basedcopolymers (copolymers having a constituent unit derived from ethylene),such as ethylene-propylene copolymers, ethylene-vinyl acetatecopolymers, ethylene-(meth)acrylic acid copolymers, ethylene-methyl(meth)acrylate copolymers, and ethylene-ethyl (meth)acrylate copolymers;polyvinyl chloride; vinyl chloride-vinyl acetate copolymers;polyurethanes; ionomers; polyesters, such as poly(ethyleneterephthalate), polybutylene terephthalate), or poly(ethylenenaphthalate), having heat resistance; and crosslinked materials ofthese.

In the present specification, “(meth)acrylic acid” is a conceptencompassing both “acrylic acid” and “methacrylic acid”. The sameapplies to terms similar to (meth)acrylic acid, and, for example,“(meth)acrylate” is a concept encompassing both “acrylate” and“methacrylate”.

The substrate film may be a weak pressure sensitive adhesive filmcontaining a resin having pressure sensitive adhesion as a constituentmaterial. Such a substrate film is suitable for having the film-formfiring material on the substrate film by direct contact with the film instep A described later.

The substrate film may be modified by finishing, such as radiationfinishing or discharge finishing.

The substrate film may be composed of one layer (single layer) ormultiple layers of two or more. When the substrate film is composed ofmultiple layers, these multiple layers may be identical to each other ordifferent from each other, and combinations of these multiple layers arenot particularly limited.

In the present specification, “multiple layers may be identical to eachother or different from each other” means that “all layers may beidentical, all layers may be different, or only some layers may beidentical”, and furthermore, “multiple layers are different from eachother” means that “each layer is different from each other in terms ofat least one of the constituent material or the thickness”, and this isnot only the case of the substrate film.

The thickness of the substrate film is not particularly limited and maybe, for example, from 30 to 300 μm.

Here, the “thickness of the substrate film” means the thickness of theentire substrate film; for example, the thickness of a substrate filmcomposed of multiple layers means the total thickness of all layerscomposing the substrate film.

Pressure Sensitive Adhesive Layer

Examples of the pressure sensitive adhesive layer include energyray-curable pressure sensitive adhesive layers and non-curable weakpressure sensitive adhesive layers.

The energy ray-curable pressure sensitive adhesive layer is cured byirradiation with an energy ray, and the adhesive strength is reduced.

In the present specification, the “energy ray” means an electromagneticwave or a charged particle beam having an energy quantum, and examplesinclude ultraviolet rays, radiation, and electron beams. The ultravioletray can be irradiated by using, for example, a high-pressure mercurylamp, a fusion lamp, a xenon lamp, a black light, or an LED lamp as anultraviolet ray source. The electron beam can be generated by anelectron beam accelerator or the like and irradiated.

In addition, “energy ray-curable” means a property of being cured byirradiation with an energy ray, and “non-curable” means a property ofbeing not cured by any means, such as heating or irradiation with anenergy ray.

Examples of the constituent material of the energy ray-curable pressuresensitive adhesive layer include known energy ray-curable pressuresensitive adhesives.

Examples of the constituent materials of the non-curable weak pressuresensitive adhesive layer include general-purpose pressure sensitiveadhesives, such as rubber-based pressure sensitive adhesives, acrylicpressure sensitive adhesives, silicone-based pressure sensitiveadhesives, urethane-based pressure sensitive adhesives, vinylether-based pressure sensitive adhesives, and pressure sensitiveadhesives containing a thermal expansion component.

The pressure sensitive adhesive layer with concave-convex morphology onthe pressure sensitive adhesive surface can be used as the weak adhesivepressure sensitive adhesive layer.

The non-curable weak pressure sensitive adhesive layer may exhibit anadhesive strength, for example, of 30 to 120 mN/25 mm to a stainlesssteel plate (SUS plate) at 23° C.

The pressure sensitive adhesive layer may be composed of one layer(single layer) or multiple layers of two or more. When the pressuresensitive adhesive layer is composed of multiple layers, these multiplelayers may be identical to each other or different from each other, andcombinations of these multiple layers are not particularly limited.

A thickness of the pressure sensitive adhesive layer is not particularlylimited and may be, for example, from 1 to 100 μm.

Here, the “thickness of the pressure sensitive adhesive layer” means thethickness of the entire pressure sensitive adhesive layer; for example,the thickness of a pressure sensitive adhesive layer composed ofmultiple layers means the total thickness of all layers composing thepressure sensitive adhesive layer.

Film-Form Firing Material

A shape of the film-form firing material is identical or substantiallyidentical to a shape of a semiconductor chip to be applied and may be,for example, square or rectangular. In the present specification, unlessotherwise noted, the “shape of the film-form firing material” means ashape of the film-form firing material in a planar view (i.e., a planarshape) when the film-form firing material is looked down from above themain surface (e.g., a first surface described later).

A size of the film-form firing material is identical to a size of asemiconductor chip to be applied.

The film-form firing material contains a sinterable metal particle and abinder component and may or may not contain an additional componentother than these.

Sinterable Metal Particle

The sinterable metal particles are bonded to each other to form asintered body upon firing the film-form firing material. The materialsplaced in contact with the film-form firing material are jointedtogether via a sintered body of the film-form firing material by firing.

The sinterable metal particle is a particle containing at least a metalelement and may be a particle consisting only of a metal element or maybe a particle composed of a metallic element and a non-metallic element.Examples of the particle composed of a metallic element and anon-metallic element include metal oxide particles.

Examples of the metal species constituting the sinterable metal particleinclude silver, gold, copper, iron, nickel, aluminum, silicon,palladium, platinum, and titanium, and the metal species may be a singlemetal or an alloy of two or more metals.

The metal species constituting one sinterable metal particle may be onlyone species, or two or more species. When two or more species constituteone sinterable metal particle, the combination and ratio of them can befreely selected.

For example, the metal oxide may be a complex oxide containing two ormore metal elements, and examples of such complex oxides include bariumtitanate.

The sinterable metal particle may not be particularly limited in itsparticle size as long as the metal particle exhibits sinterability, andthe particle size may be, for example, 100 nm or smaller, 50 nm orsmaller, and 30 nm or smaller to provide excellent sinterability.

In the present specification, the “particle size of the metal particle”means a diameter of a circle having an area equal to a projected area ofthe metal particle observed using an electron microscope (projected areaequivalent circle diameter).

The particle size of the sinterable metal particle in terms of thenumber average of the particle diameters determined for particles withthe projected area equivalent circle diameter of 100 nm or smaller maybe any of from 0.1 to 95 nm, from 0.3 to 50 nm, and from 0.5 to 30 nm.The metal particles to be observed are 100 or more particles randomlyselected in one film-form firing material.

The sinterable metal particle is preferably a nano-sized particle,preferably a silver particle, and more preferably a nano-sized silverparticle (silver nanoparticle).

In the present specification, the “nano-sized particle” means a particlewith a particle size of 100 nm or less.

Binder Component

The binder component is a component for imparting formability andpressure sensitive adhesion to the film-form firing material.

The binder component may be a thermally decomposable binder component,which is thermally decomposed upon firing the film-form firing material.

The binder component is not particularly limited but is preferably aresin.

Examples of the resin include acrylic resins, polycarbonate resins,polylactic acids, and polymers of cellulose derivatives, and acrylicresins are preferred.

Examples of the acrylic resin include homopolymers of a (meth)acrylatecompound, copolymers of two or more (meth)acrylate compounds, andcopolymers of a (meth)acrylate compound and another monomer.

In the acrylic resin, a content of a constituent unit derived from the(meth)acrylate compound may be, for example, from 50 to 100 mass %relative to the total amount of a constituent unit(s).

Specific examples of the (meth)acrylate compound include alkyl(meth)acrylates, hydroxyalkyl (meth)acrylates, phenoxyalkyl(meth)acrylates, alkoxyalkyl (meth)acrylates, polyalkylene glycol(meth)acrylates, cycloalkyl (meth)acrylates, benzyl (meth)acrylate, andtetrahydrofurfuryl (meth)acrylate.

The acrylic resin is preferably methacrylate. The binder componentcontaining a constituent unit derived from methacrylate enables thefilm-form firing material to be fired at relatively low temperatures,providing higher joint strength after sintering.

In the acrylic resin, a content of a constituent unit derived frommethacrylate may be, for example, from 50 to 100 mass % relative to thetotal amount of a constituent unit(s).

The another monomer is any compound copolymerizable with the(meth)acrylate compound and is not particularly limited.

Examples of the another copolymerizable monomer include unsaturatedcarboxylic acids, such as (meth)acrylic acid, vinyl benzoate, maleicacid, and vinyl phthalate; and vinyl group-containing radicalpolymerizable compounds, such as vinyl benzyl methyl ether, vinylglycidyl ether, styrene, α-methylstyrene, butadiene, and isoprene.

A weight average molecular weight (Mw) of the resin may be, for example,from 1000 to 1000000. With the weight average molecular weight of theresin within such a range, the film-form firing material has higherstrength and better flexibility.

In the present specification, unless otherwise noted, the “weightaverage molecular weight” is a polystyrene equivalent value measured bygel permeation chromatography (GPC).

A glass transition temperature (Tg) of the resin may be, for example,from −60 to 50° C. The resin with a Tg not lower than the lower limitdescribed above further facilitates peeling off of the film-form firingmaterial from the support sheet described later. The resin with a Tg nothigher than the upper limit described above further improves theadhesive strength of the film-form firing material with a semiconductorchip or the like.

When the binder component is thermally decomposable, that is, thermallydecomposed upon firing the film-form firing material, the thermaldecomposition of the binder component can be confirmed by the mass lossof the binder component upon firing.

In the present embodiment, upon firing the film-form firing material,the entire amount of the binder component may be substantially orcompletely thermally decomposed, or a portion of the binder componentmay not be thermally decomposed.

The mass of the binder component after firing may be, for example, 10mass % or less relative to the mass of the binder component beforefiring.

Semiconductor Chip

The semiconductor chip may be a known semiconductor chip.

The size of the semiconductor chip (e.g., the area of the semiconductorchip in a planar view when the semiconductor chip is looked down fromabove its circuit forming surface) may be, for example, from 0.01 to 25cm² or from 0.25 to 9 cm².

Substrate

The substrate is not particularly limited as long as it can be jointedto a semiconductor chip.

Examples of a preferred substrate include ceramic substrates.

Next, the method of manufacturing a laminate of the present embodimentwill be described in detail with reference to drawings. In figures usedin the following descriptions, a main part may be enlarged forconvenience to facilitate understanding of features of the presentinvention, and a dimension ratio or the like of each component is notnecessarily identical to the actual one.

First, the method of manufacturing a laminate (which may be referred toas the “first embodiment” in the present specification) will bedescribed by taking an example of using the support sheet 11 illustratedin FIG. 1A and FIG. 1B.

FIG. 3A to FIG. 3E are cross-sectional views for schematicallyillustrating an example of a method of manufacturing a laminate of thepresent embodiment.

First Embodiment Step A

In step A, as illustrated in FIG. 3A, the film-form firing material 12is provided on the support sheet 11. In the present embodiment, thesupport sheet thus provided with the film-form firing materials may bereferred to as the “support sheet-attached film-form firing material”.In FIG. 3A, the support sheet-attached film-form firing material isdenoted by reference numeral 1.

As described above, the support sheet 11 is provided with the pressuresensitive adhesive layer 112, and thus, in step A, more specifically,the film-form firing material 12 is provided on the pressure sensitiveadhesive layer 112 (the first surface 112 a of the pressure sensitiveadhesive layer 112) of the support sheet 11.

In step A, as illustrated here, the film-form firing material 12 ispreferably brought into direct contact with the first surface 11 a ofthe support sheet 11.

In step A, as illustrated here, preferably a plurality (two or more) ofthe film-form firing materials 12 is provided on one support sheet 11.In that case, the number of the film-form firing materials 12 providedon one support sheet 11 is preferably from 10 to 10000 and morepreferably from 25 to 1000. With the number of the film-form firingmaterials not less than the lower limit described above, manufacturingefficiency of the laminate is increased. With the number of thefilm-form firing materials not greater than the upper limit describedabove, a material with a more appropriate size as the support sheet 11can be used, further improving the work suitability of step A.

FIG. 4 is a plan view schematically illustrating an example of a supportsheet-attached film-form firing material produced by a method ofmanufacturing of the present embodiment.

The shape of the support sheet 11 illustrated here is quadrangular, andthe first surface 11 a of the support sheet 11 is provided with a totalof 35 film-form firing materials 12 in five rows and seven rows in twoorthogonal directions.

In addition, on the support sheet 11, all the film-form firing materials12 are oriented in the same way, and the film-form firing materials 12are placed in alignment so that the placement positions of the adjacentfilm-form firing materials 12 coincide with each other in the twoorthogonal directions described above. That is, the film-form firingmaterials 12 are provided side-by-side in a lattice pattern on thesupport sheet 11. In FIG. 4, reference numeral 12 a denotes a surface(which may be referred to as the “first surface” in the presentspecification) of the film-form firing material 12, the surface oppositefrom the support sheet 11 side of the film-form firing material 12.

Step A, in which the film-form firing materials 12 are thus providedside-by-side in a lattice pattern on the support sheet 11, is an exampleof a preferred embodiment.

In FIG. 4, the film-form firing materials 12 are provided side-by-sidein a lattice pattern on the support sheet 11, but the placement patternof the film-form firing materials 12 on the support sheet 11 is notlimited to this. For example, orientations of one or two or morefilm-form firing materials 12 need not be the same, and for one or twoor more film-form firing materials 12, the placement positions ofadjacent film-form firing materials 12 need not coincide with each otherin the two orthogonal directions described above.

In FIG. 4, the number of the film-form firing materials 12 provided onthe support sheet 11 is 35, but the number is not limited to this. Forexample, the number may be as previously described.

Preferred examples of the method of providing the film-form firingmaterial 12 on the support sheet 11 in step A include a method ofproviding the film-form firing material 12 on the support sheet 11 byprinting (which may be referred to as the “method (A-1)” in the presentspecification); and a method of providing the film-form firing material12 on the support sheet 11 by transferring the film-form firing material12 formed on a release film onto the support sheet 11 (which may bereferred to as the “method (A-2)”).

As has been known in the art, when a paste-like composition used as araw material for the film-form firing material 12 is applied using asyringe onto the support sheet 11 and sintered to form a joint portion,it is difficult to produce uniform thickness of the applied compositionby controlling the coating amount of the composition. And thus a jointportion with high thickness stability is difficult to form.

In contrast to this, employing the method (A-1) or (A-2) described aboveenables the film-form firing material 12 with high thickness stabilityto be provided on the support sheet 11 (here, more specifically thefirst surface 11 a of the support sheet 11), and as a result, a jointportion formed from the film-form firing material 12 also maintains highthickness stability in step E described later. In particular, when themethod (A-2) is employed, the film-form firing material 12 with highthickness stability is formed in advance on a release film. And thustransferring this film-form firing material 12 as is enables thefilm-form firing material 12 with higher thickness stability to beprovided on the support sheet 11.

In the present specification, “with high thickness stability” withregard to the film-form firing material and the joint portion formedfrom the film-form firing material means that these have high thicknessuniformity.

Examples of the method of forming the film-form firing material 12 on arelease film in the method (A-2) include: a method of forming thefilm-form firing material 12 on the release film by printing; and amethod of forming the film-form firing material 12 on the release filmby punching using a mold having an identical or substantially identicalshape and an identical size to a shape and size of the semiconductorchip to be applied.

Examples of the method of printing the film-form firing material 12 onthe support sheet 11 in the method (A-1) and the method of printing thefilm-form firing material 12 on the release film in the method (A-2)include known printing methods. Examples of the printing method morespecifically include letterpress printing methods, such as flexographicprinting methods; intaglio printing methods, such as gravure printingmethods; lithographic methods, such as offset printing methods; screenprinting methods, such as silk screen printing methods and rotary screenprinting methods; and printing methods using a printer of various types,such as inkjet printing methods.

Step B Step B is Performed After Step A.

In step B, as illustrated in FIG. 3B, a back surface 9 b side of eachsemiconductor chip 9 is applied to each film-form firing material 12 onthe support sheet 11 to face each other. Here, a first surface 12 a ofeach film-form firing material 12 and the back surface 9 b of eachsemiconductor chip 9 are bonded together.

For the application of the semiconductor chip 9 to the film-form firingmaterial 12, a known method of fixing and moving a semiconductor chip,such as, for example, a method using a collet, can be employed.

In step B, when the semiconductor chip 9 is applied to the film-formfiring material 12, a semiconductor chip with a defect can be rejectedand this ensures that a semiconductor chip 9 free from defect can beapplied to the film-form firing material 12. Thus, this eliminates thewaste of the film-form firing material 12 and provides a good yield ofthe film-form firing material 12.

Step C Step C is Performed After Step B.

In step C, as illustrated in FIG. 3C, the film-form firing material 12and the semiconductor chip 9 are peeled off from the support sheet 11.At this time, the film-form firing material 12 and the semiconductorchip 9 which remain bonded to each other and integrated as a single bodyare peeled off from the support sheet 11. In the present embodiment, onethus including a semiconductor chip and a film-form firing materialprovided on a back surface of the semiconductor chip may be referred toas the “film-form firing material-attached semiconductor chip”. In FIG.3C, the film-form firing material-attached semiconductor chip is denotedby reference numeral 90. Arrow P in FIG. 3C indicates a direction inwhich the film-form firing material-attached semiconductor chip 90 ispeeled off.

Here, FIG. 3C illustrates a state of step C in a phase where the peelingoff of some of the film-form firing material-attached semiconductorchips 90 from the support sheet 11 has not been completed.

In step C, preferably the support sheet 11 is expanded to generatestress at interface between the support sheet 11 and the film-formfiring material 12, the film-form firing material 12 and thesemiconductor chip 9 (i.e., the film-form firing material-attachedsemiconductor chips 90) are peeled off from the support sheet 11 asillustrated here. Such a procedure enables easy and precise peeling ofthe film-form firing material-attached semiconductor chip 90 off fromthe support sheet 11. Arrow E in FIG. 3C indicates a direction in whichthe support sheet 11 is expanded.

For the method of expanding the support sheet 11, a known method ofexpanding a sheet for semiconductor processing or the like in the fieldof manufacturing semiconductor devices can be used. Examples include amethod of expanding the support sheet 11 by fixing the support sheet 11at a position slightly inside the outer periphery along its outerperiphery, and making the height of the further inside from this fixedportion relatively higher than the height of the outside from the fixedportion.

For peeling off the film-form firing material-attached semiconductorchip 90 from the support sheet 11, a known method of fixing and moving asemiconductor chip, such as, for example, a method using a collet, canbe employed.

In step C, for example, the film-form firing material-attachedsemiconductor chip 90 may be peeled off from the support sheet 11 byapplying a force to the film-form firing material-attached semiconductorchip 90 from a surface (which may be referred to as the “second surface”in the present specification) 11 b side of the support sheet 11, thesurface opposite from the first surface 11 a of the support sheet 11,through the support sheet 11 in a direction from the support sheet 11toward the film-form firing material-attached semiconductor chip 90, andpushing up the film-form firing material-attached semiconductor chip 90.Such a procedure enables easier and more precise peeling of thefilm-form firing material-attached semiconductor chip 90 from thesupport sheet 11.

The second surface 11 b of the support sheet 11 is the same as a surface(which may be referred to as the “second surface” in the presentspecification) 111 b of the substrate film 111, the surface oppositefrom the first surface 111 a of the substrate film 111.

Examples of the method of pushing up the film-form firingmaterial-attached semiconductor chip 90 include: a method of pushing upby, using a needle, bringing the tip portion of the needle into contactwith the support sheet 11, and moving the needle in the directiondescribed above (the direction from the support sheet 11 toward thefilm-form firing material-attached semiconductor chip 90) (see, e.g., JP2658915 B and JP 2635889 B); a method of pushing up by, using aneedleless slider, bringing the tip portion of the needleless sliderinto contact with the support sheet 11, and moving (sliding) theneedleless slider along the second surface 11 b of the support sheet 11while pushing up the support sheet 11 in the direction described above(see, e.g., WO 2005/029574); and a method of pushing up by, using aprotruding member in which three protruding blocks are placed inparallel and achieve a protruding state and a non-protruding state bymoving up and down, bringing the tip portions of the protruding partinto contact with the support sheet 11, and moving the three protrudingblocks in the direction described above by varying the distance to makea pyramidal formation with the tip portions of the three protrudingblocks (see, e.g., WO 2011/125492).

For the support sheet 11 provided with the substrate film 111 and thepressure sensitive adhesive layer 112, the pressure sensitive adhesivelayer 112 having energy ray-curability, as previously described, in stepC, the pressure sensitive adhesive layer 112 is irradiated with anenergy ray, and the film-form firing material 12 and the semiconductorchip 9 (i.e., the film-form firing material-attached semiconductor chip90) are preferably peeled off from the support sheet 11 (here, morespecifically a cured product of the pressure sensitive adhesive layer112). In this case, curing the pressure sensitive adhesive layer 112 byirradiation with an energy ray reduces the adhesive strength between thecured product of the pressure sensitive adhesive layer 112 and thefilm-form firing material 12 and thus enables the film-form firingmaterial-attached semiconductor chip 90 to be more easily peeled offfrom the support sheet 11.

In the present embodiment, in one to three steps of step A, step B, andstep C, the support sheet 11 can be temporarily fixed to a support frame(not illustrated) by bonding the peripheral edge of the pressuresensitive adhesive layer 112 (more specifically, the first surface 112 aof the pressure sensitive adhesive layer 112) in the support sheet 11 tothe support frame. In that case, the top portion of the peripheral edgeof the first surface 112 a of the pressure sensitive adhesive layer 112is left open to avoid hindrance of bonding of the pressure sensitiveadhesive layer 112 to the support frame. Here, the peripheral edgeportion of the first surface 112 a of the pressure sensitive adhesivelayer 112 is a narrow region of the first surface 112 a of the pressuresensitive adhesive layer 112, the narrow region along the outerperipheral portion of the pressure sensitive adhesive layer 112,similarly to the peripheral edge portion 1110 a of the first surface 111a of the substrate film 111 previously described.

Step D Step D is Performed After Step C.

In step D, as illustrated in FIG. 3D, the side of the film-form firingmaterial 12 of the semiconductor chip 9 to which the film-form firingmaterial 12 is applied (i.e., the film-form firing material-attachedsemiconductor chip 90) is applied to a substrate 8. In the presentspecification, “the side of the film-form firing material 12 of thefilm-form firing material-attached semiconductor chip 90” is the same asthe surface (which may be referred to as the “second surface” in thepresent specification) 12 b of the film-form firing material 12, thesurface opposite from the semiconductor chip 9 side of the film-formfiring material 12. Arrow M in FIG. 3D indicates a moving direction ofthe film-form firing material-attached semiconductor chip 90 when thechip is applied to the substrate 8.

Here, FIG. 3D illustrates a state of step D in a phase where theapplication of some of the film-form firing material-attachedsemiconductor chips 90 to the substrate 8 has not been completed.

For the application of the film-form firing material-attachedsemiconductor chip 90 to the substrate 8, a known method of fixing andmoving a semiconductor chip, such as, for example, a method using acollet, can be employed.

In the present embodiment, the application of the film-form firingmaterial-attached semiconductor chip 90 to the substrate 8 by step D maybe initiated at or after the peeling off of the film-form firingmaterial-attached semiconductor chip 90 from the support sheet 11 bystep C is completed for all the film-form firing material-attachedsemiconductor chips 90; or the application of the film-form firingmaterial-attached semiconductor chip 90 to the substrate 8 by step D maybe initiated before the peeling off of the film-form firingmaterial-attached semiconductor chip 90 from the support sheet 11 bystep C is completed for all the film-form firing material-attachedsemiconductor chips 90. Then, in the latter case, after one film-formfiring material-attached semiconductor chip 90 is peeled off from thesupport sheet 11 in step C, step D is immediately performed to applythis peeled film-form firing material-attached semiconductor chip 90 tothe substrate 8, and preferably, this operation of continuouslyperforming step C and step D for one film-form firing material-attachedsemiconductor chip 90 is applied to all the film-form firingmaterial-attached semiconductor chips 90 and repeated.

Step E Step E is Performed After Step D.

In step E, the film-form firing material 12 is heated to 200° C. orhigher to sinter-bond the semiconductor chips 9 and the substrate 8 asillustrated in FIG. 3E.

By performing step E, firing of the film-form firing material 12 resultsin formation of the joint portion 12′ from the film-form firing material12 and thus a laminate 801 having a configuration in which thesemiconductor chips 9 and the substrate 8 are laminated via the jointportion 12′ is provided.

In step E, the upper limit of the heating temperature of the film-formfiring material 12 is not particularly limited. For example, from theviewpoint of prevention of damage due to heating to wirings formed onthe surfaces of the semiconductor chips 9, the heating temperature ofthe film-form firing material 12 is preferably 500° C. or lower. On theother hand, heating at a temperature not lower than the lower limitdescribed above further improves the degree of firing of the film-formfiring material 12.

In step E, the time duration for heating the film-form firing material12 can be appropriately selected in consideration of the type of thefilm-form firing material 12 and the heating temperature but ispreferably from 1 to 60 minutes. With the time duration for heating notshorter than the lower limit of the time duration described above, thedegree of firing of the film-form firing material 12 is furtherimproved. With the time duration for heating not longer than the upperlimit of the time duration described above, excessive heating isprevented.

In step E, in addition to heating the film-form firing material 12, thefilm-form firing material 12 may be pressurized as well. Such aprocedure can further improve the joint strength of the semiconductorchip 9 and the substrate 8 and the strength of the joint portion 12′themselves.

The pressure to the film-form firing material 12 at this time may beapplied from the substrate 8 side, from the semiconductor chip 9 side,or from both the substrate 8 side and the semiconductor chip 9 side.

The pressure during the pressurization of the film-form firing material12 is not particularly limited but is preferably 5 MPa or higher. Thepressure in such a range further increases the effect obtained by thepressurization.

That is, in step E, in addition to heating the film-form firing material12 to 200° C. or higher, pressurizing the film-form firing material 12at 5 MPa or higher may be performed to sinter-bond the semiconductorchips 9 and the substrates 8.

In step E, the upper limit of the pressure in pressurizing as well asheating the film-form firing material 12 is not particularly limited.For example, from the perspective of prevention of damage to thesubstrate 8, particularly the substrate 8 that is a ceramic substrate,the pressure is preferably 50 MPa or lower.

In the present embodiment, the joint portion 12′ is formed from thefilm-form firing material 12 and thus has excellent thickness stabilityand thermal conductivity. In addition, the film-form firing material 12has an identical or substantially identical shape and an identical sizeto a shape and size of the semiconductor chip 9, and thus thiseliminates the need to cut the film-form firing material 12 to the shapeand size of the semiconductor chip 9. Thus, this eliminates thegeneration of cutting debris originating from the film-form firingmaterial 12 even if the film-form firing material 12 is brittle,prevents damage to the film-form firing material 12, and forms a jointportion 12′ free from damage.

The laminate 801 is suitable for constituting a power semiconductorelement (power device).

The method of manufacturing of the present embodiment is not limited tothose described so far and may be those in which one or someconfigurations are changed or deleted, or those in which another orother configurations are further added to those described so far withina scope not departing from the gist of the present invention. Morespecifically, those are as follows.

The present embodiment has been described so far for the method ofmanufacturing a laminate in which the shape of the support sheet isquadrangular, but the shape of the support sheet used in the presentembodiment may be circular. FIG. 5 is a plan view schematicallyillustrating an example of the support sheet-attached film-form firingmaterial in that case.

The shapes of a support sheet 21 and a support sheet-attached film-formfiring material 2 illustrated here are circular.

A substrate film (not illustrated) in the support sheet 21 is the sameas the substrate film 111 in the support sheet 11 except that the shapeis circular, and a pressure sensitive adhesive layer 212 in the supportsheet 21 is the same as the pressure sensitive adhesive layer 112 in thesupport sheet 11 except that the shape is circular.

A surface (which may be referred to as the “first surface” in thepresent specification) 212 a of the pressure sensitive adhesive layer212, the surface opposite from the substrate film side of the pressuresensitive adhesive layer 212, is the same as the first surface 21 a ofthe support sheet 21.

The first surface 21 a of the support sheet 21 is provided with a totalof 56 film-form firing materials 12 in four to eight rows and three tonine rows in two orthogonal directions.

The placement pattern of the film-form firing materials 12 on thesupport sheet 21 illustrated in FIG. 5 is the same as the placementpattern of the film-form firing materials 12 on the support sheet 11except that the number of rows of the film-form firing materials 12, thenumber of the film-form firing materials 12 per row, and the totalnumber of the film-form firing materials 12 are different.

The support sheet-attached film-form firing material 2 illustrated inFIG. 5 is an example of the support sheet-attached film-form firingmaterial in which the support sheet is circular, and the circularsupport sheet-attached film-form firing material produced in the presentembodiment is not limited to the one illustrated here.

For example, for the circular support sheet-attached film-form firingmaterial, the placement pattern, such as the orientation, placementposition, and number of rows of the film-form firing materials, thenumber of the film-form firing materials per row, and the total numberof the film-form firing materials on the support sheet, can be freelyset according to the purpose.

The method of manufacturing a laminate using the support sheet 21 is thesame as the method of manufacturing a laminate described above exceptthat the support sheet 21 is used instead of the support sheet 11.

For example, when the support sheet 21 is used, in one to three steps ofstep A, step B, and step C, the support sheet 21 can be temporarilyfixed to a support frame (not illustrated) by bonding the peripheraledge of the pressure sensitive adhesive layer 212 (more specifically,the first surface 212 a of the pressure sensitive adhesive layer 212) inthe support sheet 21 to the support frame. In that case, the top portionof the peripheral edge of the first surface 212 a of the pressuresensitive adhesive layer 212 is left open to avoid hindrance of bondingof the pressure sensitive adhesive layer 212 to the support frame. Here,the peripheral edge portion of the first surface 212 a of the pressuresensitive adhesive layer 212 is similar to that of the pressuresensitive adhesive layer 112 previously described and is a narrow regionof the first surface 212 a of the pressure sensitive adhesive layer 212,the narrow region along the outer peripheral portion of the pressuresensitive adhesive layer 212.

The shape of the support sheet used in the present embodiment may beband-like. FIG. 6 is a plan view schematically illustrating an exampleof the support sheet-attached film-form firing material in that case.

The shapes of a support sheet 31 and a support sheet-attached film-formfiring material 3 illustrated here are band-like.

A substrate film (not illustrated) in the support sheet 31 is the sameas the substrate film 111 in the support sheet 11 except that the shapeis band-like, and a pressure sensitive adhesive layer 312 in the supportsheet 31 is the same as the pressure sensitive adhesive layer 112 in thesupport sheet 11 except that the shape is band-like.

A surface (which may be referred to as the “first surface” in thepresent specification) 312 a of the pressure sensitive adhesive layer312, the surface opposite from the substrate film side of the pressuresensitive adhesive layer 312, is the same as the first surface 31 a ofthe support sheet 31.

The first surface 31 a of the support sheet 31 is provided with two ormore film-form firing materials 12 in one row in the longitudinaldirection of the support sheet 31.

On the support sheet 31, orientations of all the film-form firingmaterials 12 are the same, and the film-form firing materials 12 areprovided side by side at regular intervals in the longitudinaldirection. In addition, the placement positions of all the film-formfiring materials 12 coincide with each other in the direction orthogonalto the longitudinal direction.

The number of the film-form firing materials 12 provided on the supportsheet 31 is not particularly limited and can be freely selectedaccording to the purpose. For example, the number may be from 5 to10000.

The number of rows of the film-form firing materials 12 on the supportsheet 31 may be other than one (i.e., two or more). When the number ofrows is two or more, the film-form firing materials 12 may be providedside-by-side in a lattice pattern on the support sheet 31.

The placement pattern of the film-form firing materials 12 on thesupport sheet 31 is the same as the placement pattern of the film-formfiring materials 12 on the support sheet 11 except that the number ofrows of the film-form firing materials 12, the number of the film-formfiring materials 12 per row, and the total number of the film-formfiring materials 12 can be different.

The support sheet-attached film-form firing material 3 illustrated inFIG. 6 is an example of the support sheet-attached film-form firingmaterial in which the support sheet is band-shaped. The band-shapedsupport sheet-attached film-form firing material produced in the presentembodiment is not limited to the one illustrated here.

For example, for the band-shaped support sheet-attached film-form firingmaterial, the placement pattern, such as the orientation, placementposition, and number of rows of the film-form firing materials, thenumber of the film-form firing materials per row, and the total numberof the film-form firing materials on the support sheet, can be freelyset according to the purpose.

The method of manufacturing a laminate using the support sheet 31 is thesame as the method of manufacturing a laminate described above exceptthat the support sheet 31 is used instead of the support sheet 11.

In the present embodiment, the support sheet-attached film-form firingmaterial produced by performing step A is suitable for storage.

For example, a support sheet-attached film-form firing material furtherprovided with a protective film on the first surface of the film-formfiring material is particularly suitable for storage.

That is, the method of manufacturing of the present embodiment mayinclude between step A and step B:

applying a protective film to a surface (first surface) of the film-formfiring material, the surface opposite from the support sheet side of thefilm-form firing material (which may be referred to as “step F1” in thepresent specification);

storing the support sheet and film-form firing material (the supportsheet-attached film-form firing material) after application of theprotective film (which may be referred to as “step F2” in the presentspecification); and

peeling off the protective film from the film-form firing material onthe support sheet to which the protective film has been attached afterstorage (the support sheet-attached film-form firing material afterstorage) (which may be referred to as “step F3” in the presentspecification).

The protective film is for protecting the film-form firing material inthe support sheet-attached film-form firing material. Examples of theprotective film include those similar to the release film previouslyexemplified.

FIG. 7 is a cross-sectional view schematically illustrating an exampleof a support sheet-attached film-form firing material provided with aprotective film in which the support sheet 11 is used.

The support sheet-attached film-form firing material 1 illustrated hereis provided with a protective film 7 on the first surfaces 12 a of thefilm-form firing materials 12. The shape and size of the protective film7 are not particularly limited as long as the protective film 7 cancover the first surfaces 12 a of all the film-form firing materials 12in the support sheet-attached film-form firing material 1; for example,the shape (planar shape) of the protective film 7 may be identical tothe shape (planar shape) of the support sheet 11 to improve thehandleability of the support sheet-attached film-form firing material 1in a state where the protective film 7 is provided.

The support sheet-attached film-form firing material provided with aprotective film also has a similar structure, except for the shape, tothat of the support sheet-attached film-form firing material 1 providedwith a protective film, in the case where the shape of the support sheetis not quadrilateral as in the case of support sheet 11, but is circularas in support sheet 21 or a band-shaped support sheet as in the case ofthe support sheet 31.

When the support sheet-attached film-form firing material provided witha protective film has a quadrilateral-shaped or circle-shaped supportsheet (e.g., the support sheet-attached film-form firing material 1 orthe support sheet-attached film-form firing material 2), a plurality ofthe support sheet-attached film-form firing materials can be stored, forexample, by stacking in the thickness direction.

In addition, such a support sheet-attached film-form firing material canbe stored, for example, by winding one sheet of the material into aroll.

For example, the support sheet-attached film-form firing materialprovided with a protective film and having a band-shaped support sheet(e.g., the support sheet-attached film-form firing material 3) isparticularly suitable for storing by winding one sheet (one strip) ofthe material into a reel-form.

That is, when the support sheet is band-shaped, step F2 above may be forwinding the support sheet and the film-form firing materials (thesupport sheet-attached film-form firing material) after application ofthe protective film into a reel to store the material. In addition, stepF3 above may be for unwinding the support sheet and the film-form firingmaterials after storage to which the protective film is applied (thesupport sheet-attached film-form firing material after storage) from thereel and then peeling off the protective film from the film-form firingmaterial.

FIG. 8 is a cross-sectional view schematically illustrating an exampleof a support sheet-attached film-form firing material provided with aprotective film in which the support sheet 31 is used. Here, FIG. 8illustrates a state where the support sheet-attached film-form firingmaterial 3 provided with a protective film, the material in a reel-form,is being unwound.

The support sheet-attached film-form firing material 3 illustrated hereis provided with the protective film 7 on the first surfaces 12 a of thefilm-form firing materials 12.

The support sheet-attached film-form firing material 3 is wound in areel with the exposed surface of the protective film 7 facing inward inthe radial direction of the reel and the exposed surface (second surface11 b) of the support sheet 11 facing outward in the radial direction ofthe reel, with the support sheet 11 wound outwardly (in other words,with the protective film 7 wound inwardly).

Those obtained by bonding a plurality of support sheet-attachedfilm-form firing materials having a quadrilateral-shaped orcircle-shaped support sheet (e.g., the support sheet-attached film-formfiring materials 1 or the support sheet-attached film-form firingmaterials 2) in the longitudinal direction to one strip (one sheet) ofthe band-shaped protective film (e.g., the protective film 7)(hereinafter referred to as the “band-shaped composite film”) is alsoparticularly suitable for storing by winding one strip of the film intoa reel in the same manner as for the support sheet-attached film-formfiring material having a band-shaped support sheet described above. Alsoin this case, this band-shaped composite film is wound into a reel withthe exposed surface of the protective film facing inward in the radialdirection of the reel and the exposed surface (second surface) of thesupport sheet facing outward in the radial direction of the reel, withthe support sheet wound outwardly (in other words, with the protectivefilm wound inwardly).

When a plurality of the support sheet-attached film-form firingmaterials is bonded to one strip of the band-shaped protective film inthe longitudinal direction of the protective film, the plurality of thesupport sheet-attached film-form firing materials may be placed in onerow or in two or more rows in the longitudinal direction of one strip ofthe protective film.

In addition, the plurality of the support sheet-attached film-formfiring materials thus placed in a row(s) is preferably placed separatedfrom each other.

In using the band-shaped composite film, step F1 above may be forapplying the plurality of support sheets provided with the film-formfiring materials (i.e., the plurality of support sheet-attachedfilm-form firing materials) in a row(s) to one strip of the band-shapedprotective film, via surfaces (first surfaces) of the film-form firingmaterials, the surfaces opposite from the support sheet side of thefilm-form firing materials. In addition, step F2 above may be forwinding into a reel the band-shaped protective film to which theplurality of the support sheets provided with the film-form firingmaterials (the plurality of support sheet-attached film-form firingmaterials) is applied, and for storing the band-shaped protective film.Furthermore, step F3 above may be for unwinding from the reel theband-shaped protective film after storage to which the plurality of thesupport sheets provided with the film-form firing materials (theplurality of support sheet-attached film-form firing materials) isapplied, and then peeling off the band-shaped protective film from theplurality of the film-form firing materials.

Regardless of the shape of the support sheet, step F1, step F2, and stepF3 are performed in this order.

The application of the protective film to the film-form firingmaterial(s) (application of the film-form firing materials to theprotective film) in step F1, the storage of the support sheet-attachedfilm-form firing material(s) in step F2, and peeling off of theprotective film from the support sheet-attached film-form firingmaterial(s) after storage in step F3 can all be performed by a knownmethod.

Next, the method of manufacturing a laminate (which may be referred toas the “second embodiment” in the present specification) will bedescribed by taking an example of using the support sheet 19 illustratedin FIG. 2A and FIG. 2B.

FIG. 9A to FIG. 9E are cross-sectional views for schematicallyillustrating an example of a method of manufacturing a laminate of thepresent embodiment.

Second Embodiment Step A

In step A, as illustrated in FIG. 9A, the film-form firing material 12is provided on the support sheet 19 to produce a support sheet-attachedfilm-form firing material 6.

As described above, in the support sheet 19, the pressure sensitiveadhesive layer 192 is provided in the peripheral edge portion 1110 a ofthe first surface 111 a of the substrate film 111. In addition, in stepA, more specifically, the film-form firing material 12 is provided in aregion where the pressure sensitive adhesive layer 192 is not providedon the substrate film 111 of the support sheet 19 (the first surface 111a of the substrate film 111).

Step A in the second embodiment is the same as step A in the firstembodiment except that the object provided with the film-form firingmaterial 12 is different as described above.

For example, in step A of the second embodiment, as illustrated here,the film-form firing material 12 is preferably brought into directcontact with the first surface 19 a of the support sheet 19.

FIG. 10 is a plan view schematically illustrating an example of thesupport sheet-attached film-form firing material 6 produced by a methodof manufacturing of the second embodiment.

The shape of the support sheet 19 illustrated here is quadrangular, andthe film-form firing materials 12 are placed in a lattice pattern on thefirst surface 19 a of the support sheet 19 in the same placement patternas that in the support sheet-attached film-form firing material 1.However, all the film-form firing materials 12 are provided inside thepressure sensitive adhesive layer 192 on the support sheet 19 (in otherwords, in the center of gravity side of the support sheet 19).

The first surface 19 a of the support sheet 19 is the same as the firstsurface 111 a of the substrate film 111.

Step B Step B is Performed After Step A.

In step B, as illustrated in FIG. 9B, a back surface 9 b side of eachsemiconductor chip 9 is applied to the film-form firing material 12 onthe support sheet 19 to face each other. Here, also the first surface 12a of the film-form firing material 12 and the back surface 9 b of thesemiconductor chip 9 are bonded together.

Step B in the second embodiment is the same as step B in the firstembodiment except that the support sheet-attached film-form firingmaterial is different as described above.

Step C Step C is Performed After Step B.

In step C, as illustrated in FIG. 9C, the film-form firing material 12and the semiconductor chip 9 are peeled off from the support sheet 19.At this time, the film-form firing material 12 and the semiconductorchip 9 which remain bonded to each other and integrated as a single bodyare peeled off as the film-form firing material-attached semiconductorchip 90 from the support sheet 19.

Here, as in FIG. 3C, FIG. 9C also illustrates a state of step C in aphase where the peeling off of some of the film-form firingmaterial-attached semiconductor chips 90 from the support sheet 19 hasnot been completed.

Step C in the second embodiment is the same as step C in the firstembodiment except that the support sheet-attached film-form firingmaterial is different as described above.

For example, in step C of the second embodiment, preferably, the supportsheet 19 is expanded to generate stress at interface between the supportsheet 19 and the film-form firing material 12, and the film-form firingmaterial 12 and the semiconductor chip 9 (i.e., the film-form firingmaterial-attached semiconductor chip 90) are peeled off from the supportsheet 19 as illustrated here.

However, in the second embodiment, the film-form firing material 12 isin contact with the substrate film 111 but not with the pressuresensitive adhesive layer 192, and thus, even if the pressure sensitiveadhesive layer 192 has energy ray curability, curing the pressuresensitive adhesive layer 112 by irradiation with an energy ray does notenable the film-form firing material-attached semiconductor chips 90 tobe more easily peeled off from the support sheet 19.

In the second embodiment, in one to three steps of step A, step B, andstep C, the support sheet 19 can be temporarily fixed to a support frame(not illustrated) by bonding the pressure sensitive adhesive layer 192in the support sheet 19 to the support frame. In that case, the top ofthe first surface 192 a of the pressure sensitive adhesive layer 192 isleft open to avoid hinderance of bonding of the pressure sensitiveadhesive layer 192 to the support frame.

When the pressure sensitive adhesive layer 192 has energy raycurability, the pressure sensitive adhesive layer 192 is preferablyirradiated with an energy ray before the support sheet 19 fixed to thesupport frame is peeled off from the support frame. In this case, curingthe pressure sensitive adhesive layer 192 by irradiation with an energyray reduces the adhesive strength between a cured product of thepressure sensitive adhesive layer 192 and the support frame and thusenables the support sheet 19 to be more easily peeled off from thesupport frame.

Step D and step E

Step D is performed after step C, and step E is performed after step D.

In step D, as illustrated in FIG. 9D, the side of the film-form firingmaterial 12 of each the semiconductor chip 9 to which the film-formfiring material 12 is applied (i.e., the film-form firingmaterial-attached semiconductor chip 90) is applied to a substrate 8.

Here, as in FIG. 3D, FIG. 9D also illustrates a state of step D in aphase where the application of some of the film-form firingmaterial-attached semiconductor chips 90 to the substrate 8 has not beencompleted.

Then, in step E, the film-form firing material 12 is heated to 200° C.or higher to sinter-bond the semiconductor chip 9 and the substrate 8 asillustrated in FIG. 9E.

By performing step E, firing of the film-form firing material 12 resultsin formation of the joint portion 12′ from the film-form firing material12 and thus a laminate 801 having a configuration in which thesemiconductor chips 9 and the substrate 8 are laminated via the jointportions 12′ is provided.

In the second embodiment, step C described above provides the film-formfiring material-attached semiconductor chip 90 in the same manner as inthe first embodiment. Thus, step D of the second embodiment is the sameas step D of the first embodiment, and step E of the second embodimentis the same as step E of the first embodiment.

Also in the second embodiment, the joint portion 12′ is formed from thefilm-form firing material 12 and thus has excellent thickness stabilityand thermal conductivity. In addition, the film-form firing material 12has an identical or substantially identical shape and an identical sizeto a shape and size of the semiconductor chip 9, and thus thiseliminates the need to cut the film-form firing material 12 to the shapeand size of the semiconductor chip 9. Thus, this eliminates thegeneration of cutting debris originating from the film-form firingmaterial 12 even if the film-form firing material 12 is brittle,prevents damage to the film-form firing material 12, and forms a jointportion 12′ free from damage.

The method of manufacturing of the second embodiment is not limited tothose described so far and may be those in which one or someconfigurations are changed or deleted, or those in which another orother configurations are further added to those described so far withina scope not departing from the gist of the present invention. Morespecifically, those are as follows.

Also in the second embodiment, as in the first embodiment, the shape ofthe support sheet may be, for example, circular or band-like in additionto a quadrilateral. However, in all cases, as described above, all thefilm-form firing materials are provided inside the pressure sensitiveadhesive layer on the support sheet (in other words, in the center ofgravity side of the support sheet).

Also in the second embodiment, the support sheet-attached film-formfiring material produced by performing step A is suitable for storage.

For example, a support sheet-attached film-form firing material furtherprovided with a protective film on the first surface of the film-formfiring material is particularly suitable for storage.

That is, the method of manufacturing of the second embodiment mayinclude between step A and step B:

applying a protective film to a surface (first surface) of the film-formfiring material, the surface opposite from the support sheet side of thefilm-form firing material (step F1);

storing the support sheet and film-form firing material (the supportsheet-attached film-form firing material) after application of theprotective film (step F2); and

peeling off the protective film from the film-form firing material onthe support sheet to which the protective sheet has been attached afterstorage (the support sheet-attached film-form firing material afterstorage) (step F3).

Step F1, step F2, and step F3 in the second embodiment are the same asstep F1, step F2, and step F3 in the first embodiment except that thesupport sheet used is different.

In step F1 of the second embodiment, the protective film may or may notbe applied not only to the first surface of the film-form firingmaterial but also to the first surface of the pressure sensitiveadhesive layer (e.g., the first surface 192 a of the pressure sensitiveadhesive layer 192).

The support sheet-attached film-form firing material provided with aprotective film in the second embodiment (e.g., the supportsheet-attached film-form firing material 6) can be stored by the samemethod as for the support sheet-attached film-form firing materialprovided with a protective film in the first embodiment (e.g., thesupport sheet-attached film-form firing material 1 to 3).

INDUSTRIAL APPLICABILITY

The present invention can be utilized for manufacturing powersemiconductor elements (power devices).

REFERENCE SIGNS LIST

1, 2, 3, 6 . . . Support sheet-attached film-form firing material

11, 19, 21, 31 . . . Support sheet

11 a, 19 a, 21 a, 31 a. . . First surface of support sheet

111 . . . Substrate film

111 a. . . First surface of substrate film

112, 212, 192, 312 . . . Pressure sensitive adhesive layer

112 a, 212 a, 192 a, 312 a. . . First surface of pressure sensitiveadhesive layer

12 . . . Film-form firing material

12 a. . . First surface of film-form firing material

12 b. . . Second surface of film-form firing material 12

12′. . . Joint portion

8 . . . Substrate

9 . . . Semiconductor chip

9 b. . . Back surface of semiconductor chip 9

90 . . . Film-form firing material-attached semiconductor chip

801 . . . Laminate

1. A method of manufacturing a laminate, the method comprising:providing a film-form firing material on a support sheet, the film-formfiring material containing a sinterable metal particle and a bindercomponent and having an identical or substantially identical shape andan identical size to a shape and size of a semiconductor chip to beapplied; applying a back surface side of the semiconductor chip to thefilm-form firing material on the support sheet to face each other;peeling off the film-form firing material and the semiconductor chipfrom the support sheet; applying, to a substrate, a film-form firingmaterial side of the semiconductor chip to which the film-form firingmaterial has been applied; and sinter-bonding the semiconductor chip andthe substrate by heating the film-form firing material to 200° C. orhigher.
 2. The method of manufacturing a laminate according to claim 1,wherein the method includes sinter-bonding the semiconductor chip andthe substrate by applying pressure of 5 MPa or greater to the film-formfiring material in addition to heating the film-form firing material to200° C. or higher.
 3. The method of manufacturing a laminate accordingto claim 1, wherein the substrate is a ceramic substrate.
 4. The methodof manufacturing a laminate according to claim 1, wherein the supportsheet comprises a substrate film and a pressure sensitive adhesive layerprovided on an entire surface on the substrate film, and the film-formfiring material is provided on the pressure sensitive adhesive layer ofthe support sheet.
 5. The method of manufacturing a laminate accordingto claim 1, wherein the support sheet comprises a substrate film and apressure sensitive adhesive layer provided in a peripheral edge portionon the substrate film, and the film-form firing material is provided ina region where the pressure sensitive adhesive layer is not provided onthe substrate film of the support sheet.
 6. The method of manufacturinga laminate according to claim 4, wherein the pressure sensitive adhesivelayer has energy ray-curability.
 7. The method of manufacturing alaminate according to claim 6, wherein the pressure sensitive adhesivelayer is irradiated with an energy ray, and the film-form firingmaterial and the semiconductor chip are peeled off from the supportsheet.
 8. The method of manufacturing a laminate according to claim 1,wherein the film-form firing material formed on a release film istransferred onto the support sheet to provide the film-form firingmaterial on the support sheet.
 9. The method of manufacturing a laminateaccording to claim 8, wherein the film-form firing material is formed onthe release film by printing.
 10. The method of manufacturing a laminateaccording to claim 8, wherein the film-form firing material is formed onthe release film by punching using a mold having an identical orsubstantially identical shape and an identical size to a shape and sizeof the semiconductor chip to be applied.
 11. The method of manufacturinga laminate according to claim 1, wherein the film-form firing materialis provided on the support sheet by printing.
 12. The method ofmanufacturing a laminate according to claim 1, wherein the support sheetis circular.
 13. The method of manufacturing a laminate according toclaim 1, wherein the support sheet is expanded to generate stress at aninterface between the support sheet and the film-form firing material,and the film-form firing material and the semiconductor chip are peeledoff from the support sheet.
 14. The method of manufacturing a laminateaccording to claim 1, wherein the film-form firing materials areprovided side-by-side in a lattice pattern on the support sheet.